发明名称 |
Multistepped threshold convergence for a flash memory array |
摘要 |
A method of converging threshold voltages of memory cells in a flash EEPROM array after the memory cells have been erased, the method including applying a gate voltage having an initial negative value which is increased to a more positive value in steps during application of a drain disturb voltage. By applying a gate voltage with an initial negative value, leakage current during convergence is reduced enabling all cells on bit lines of the array to be converged in parallel.
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申请公布号 |
US5576991(A) |
申请公布日期 |
1996.11.19 |
申请号 |
US19940269540 |
申请日期 |
1994.07.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RADJY, NADER;CLEVELAND, LEE E.;CHEN, JIAN;HOLLMER, SHANE C. |
分类号 |
G11C17/00;G11C16/02;G11C16/16;G11C16/34;(IPC1-7):G11C11/40 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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