STORAGE ELECTRODE MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

depositing a photoresist(8) for silylatione after forming a MOS transistor, an insulating layer(2) and a polysilicone layer(4) for a storage electrode contacted to a substrate(20); silylation of injecting silicone to the exposed region of the photoresist(8); forming a photoresist pattern(10) in order to roughen the side wall of the photoresist pattern(10) by etching the not-silylated photoresist by generating O2-based plasma; and forming a storage electrode(4) by etching the exposed polysilicone layer(4), and removing the photoresist pattern(10).