发明名称 |
Superluminescent diode with offset current injection regions |
摘要 |
A superluminescent diode includes a semiconductor substrate of a first conductivity type. A lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper cladding layer of a second conductivity type opposite to the first conductivity type is provided on the active layer. A current blocking layer of the first conductivity type is buried in the upper cladding layer. The current blocking layer has a stripe-shaped groove serving as a current-injection region. The current-injection region is formed in a manner that it extends from an end face of a chip to the inside of the chip, and has a length shorter than that of the chip. The current blocking layer is made of a material having a band gap energy not greater than that of the active layer and a refractive index not smaller than that of the active layer so that light advancing in the active layer is absorbable.
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申请公布号 |
US5574304(A) |
申请公布日期 |
1996.11.12 |
申请号 |
US19950394034 |
申请日期 |
1995.02.24 |
申请人 |
ROHM CO., LTD. |
发明人 |
MUSHIAGE, MASATO;YAMAUCHI, TATSUO;SHAKUDA, YUKIO |
分类号 |
H01L33/00;H01L33/14;H01L33/44;(IPC1-7):H01L27/15;H01L29/06;H01L31/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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