发明名称 REDUCTION OF RESIDUAL POTENTIAL AND GHOSTING IN A PHOTOCONDUCTOR
摘要 <p>A system and method for reducing residual electrostatic potential and ghosting in a photoconductor alleviates the problems of low optical density and ghosting. A charge is applied to a surface of the photoconductor, and the photoconductor is exposed to conditioning radiation having wavelengths selected to release charge carriers from trap sites within the photoconductor. The applied charge establishes an electric field across the photoconductor. The released charge carriers are transported within the photoconductor under influence of the electric field to reduce residual electrostatic potential in the photoconductor. The resulting reduction in residual electrostatic potential increases optical density and eliminates ghosting problems. The system and method can be applied to existing electrophotography machines, and can be realized, at least in part, by adaptation of existing hardware present in such machines, thereby adding very little complexity, cost, size, or power consumption.</p>
申请公布号 WO1996034321(A1) 申请公布日期 1996.10.31
申请号 US1996003093 申请日期 1996.03.08
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址