SEMICONDUCTOR DEVICE,ITS PREPARATION,THREE ELEMENT DIELECTRIC COMPOUND,ITS METHOD OF APPLICATION AND PREPARATION OF DIELECTRIC COMPOUND LAYER

摘要

PROBLEM TO BE SOLVED: To effectively ensure adhesion between layers regardless of the chemical constitution, and to increase the surface characteristics. SOLUTION: A method for manufacturing a semiconductor device includes a step for forming a first layer 3 of dielectric materials on at least one part of a structure provided on a substrate 1 of semiconductor materials, and a step for forming a second layer 5 of dielectric materials overlapped on at least one area of the first layer 3. This method also includes a step for forming an intermediate adhesive layer 6 including ternary element compound of silicon, oxygen, and carbon in an area in which the first layer 3 and the second layer 5 are overlapped.