| 摘要 |
PURPOSE: To obtain an optical isolator which may be monolithically integrated on a semiconductor substrate and is easy in a process for production of this isolator and a process for producing the isolator. CONSTITUTION: An optical waveguide 3 of a ridge type is formed along the front surface of a plane substrate 1 and a diffraction grating 2 formed to attain a certain angle with the progressing direction of light within this optical waveguide 3 is disposed at the boundary between the optical waveguide 3 and the plane substrate 1. A high reflection film 4 is formed on either of the right and left side faces of the ridge type optical waveguide 3 to the progressing direction of the light and a low reflection film 5 is formed on the other. The light progressed in the optical waveguide 3 is diffracted in the side face direction by this diffraction grating 2. The attenuation of the light by the diffraction does not arise when the side face is the high reflection film 4. The attenuation of the light arises and the non-reciprocity of the light is obtd. when the side face is the low reflection film 5. |
