| 摘要 |
PURPOSE: To enable a resist pattern in acceptable rectangular shape to be formed for manufacturing a device requiring a fine pattern with high precision. CONSTITUTION: The surface of a wafer 1 with a patterned layer formed thereof in coated with a photo resist 2b. Next, the photo resist 2b is exposed using a pattern in a specific shape. Next, the specific amount of the whole surface of the photo resists 2a, 2b is etched away using O2 plasma 8. Next, the whole surface of the photo resists 2a, 2b is irradiated with ultraviolet rays 6 in a specific wavelength and after the production of polymer 4 of sensing agent contained in the not yet exposed photo resist 2b and the photo resist 2a not sufficiently exposed due to creeping-in light and resin, resist patterns are formed by development using alkalic solution. |
