| 摘要 |
forming a first oxide film(5) on a semiconductor substrate(1) on which a field oxide(2) and a gate electrode are formed; removing the first oxide film(5) on a storage node region, and forming a first polysilicone layer(7) on the first oxide film(5) and on the substrate(1); forming an oxide side wall(6) on the side of the first oxide film(5) and on the gate electrode; forming a second polysilicone layer(14) on the oxide side wall(6) and on the first polysilicone layer(7); forming a storage node electrode comprising the first and the second polysilicone layer(7,14) by etching the first polysilicone layer(7), the oxide side wall(6) and the second polysilicone layer(14); and forming a dielectric film(8) on the first and the second polysilicone layer(7,14), and forming a plate electrode(9) on the dielectric film(8).
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