| 摘要 |
<p>PURPOSE: To provide a MOS field-effect transistor which suppresses the generation of hot carriers effectively, and prevents the degradation of an element characteristic regarding a field-effect transistor having a submicron gate length or a field-effect transistor which is used in a high electric field. CONSTITUTION: A gate oxide film 13 is formed in an element formation region on a semiconductor substrate by making use of a PSG or BSG film 12 as a mask, and, after that, an n<-> diffusion region 14 which constitutes a lightly doped drain is formed while the PSG or BSG film is used as a diffusion source. Then, a gate electrode 16 is formed so as to be overlapped with the gate oxide film 13 and with a part of the PSG or BSG film, and an n<+> implantation region 17 which constitutes a source region and a drain region is formed while the gate oxide film is used as a mask. Thereby, a structure in which the lightly doped drain region and the gate electrode 16 come into contact via a thick oxide film is formed.</p> |
