发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE |
摘要 |
PURPOSE: To form a contact which can tolerate a misalignment at the time of forming a contact which connects a diffusion layer of a second conductivity demarcated by element separating areas on a semiconductor substrate of a first conductivity to wiring. CONSTITUTION: An element separating area is formed as a second insulating area (23a) which self-aligns with a first insulating area (5Aa) below the area (23a) by using a material having larger etch selectivity against an interlayer insulating film 9 in which the contact hole 12 of the second insulating area (23a) is opened. |
申请公布号 |
JPH08274166(A) |
申请公布日期 |
1996.10.18 |
申请号 |
JP19950072923 |
申请日期 |
1995.03.30 |
申请人 |
NEC CORP |
发明人 |
KASAI NAOKI |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/316;H01L21/32;H01L21/60;H01L21/76;H01L21/762;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/306 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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