Verfahren zur Verdrahtung in einer Halbleiterschaltungsanordnung,申请号DE19914132849-传众专利搜索

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发明名称	Verfahren zur Verdrahtung in einer Halbleiterschaltungsanordnung
摘要
申请公布号	DE4132849(C2)	申请公布日期	1996.10.17
申请号	DE19914132849	申请日期	1991.10.02
申请人	HITACHI, LTD., TOKIO/TOKYO, JP	发明人	NAGASE, HACHIDAI, HADANO, JP;ISHII, TATSUKI, TOKIO/TOKYO, JP;SUZUKI, KATSUYOSHI, HADANO, JP
分类号	H01L21/82;G06F17/50;H01L23/528;(IPC1-7):H01L21/768;G11C5/06	主分类号	H01L21/82
代理机构		代理人
主权项
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