CHROMIUM TARGET AND ITS PRODUCTION

摘要

PURPOSE: To propose a method for producing a chromium target having high strength, with the generation of particles minimized and suitable to scale-up. CONSTITUTION: The chromium target is used to form a thin film by sputtering. The X-ray diffraction intensity A of the (110) face as a sputtering face and the total X-ray diffraction intensity B of (110) face + (200) face + (211) face are limited to conform to A/B<=0.6, and the target has a recrystallization structure. The deflective strength of the structure is preferably controlled to >=500MPa and the average crystal grain diameter to <=50μm. The target is obtained by plastic-working a chromium material at <=1000 deg.C at least once and then applying a recrytallization heat treatment to the material at the recrystallization temp. to <=1200 deg.C.