| 摘要 |
The method of manufacturing semiconductor device comprises the steps of : forming a field oxide(2) on a semiconductor substrate(1) and forming a gate oxide(3) and a gate electrode(4) on the entire surface; forming an oxide film(6) for protecting a silicone substrate after forming an oxide film spacer(5) on the side wall of the gate electrode(4), and forming an impurity ion-injection region(7) for a source and a drain; removing the oxide film(6) for protecting the silicone substrate by dry etching; and completing a semiconductor device having DLM(double layer metalization) by forming a BPSG(Boro-Phosphorus-Silicate-Glass) film(8), a first metal wiring(9), an interfacial insulating film(10), a second metal wiring(11) and a protective film(12).
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