发明名称 |
MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
<p>PURPOSE: To improve an yield of semiconductor manufacture by reducing generation of foreign matters due to resist coming-off. CONSTITUTION: When a resist pattern is formed on the surface of a semiconductor wafer 1, a high-concentration alkaline having higher concentration than an alkaline solution removing a positive type resist of an exposure part to be used in a developing process is made to be discharged from a nozzle 8 for discharging high concentration solution to the back of the semiconductor wafer 1, thus making this to creep around the surface of the semiconductor wafer 1 so as to solve and remove the positive type resist 4 of the peripheral part of the positive type resist 4 applied on the semiconder wafer 1 so as to reduce generation of foreign matters due to coning-off of the positive type resist 4.</p> |
申请公布号 |
JPH08264418(A) |
申请公布日期 |
1996.10.11 |
申请号 |
JP19950065572 |
申请日期 |
1995.03.24 |
申请人 |
HITACHI LTD;HITACHI TOKYO ELECTRON CO LTD |
发明人 |
MORIUCHI NOBORU;ONOZUKA TOSHIHIKO;WATANABE KAZUYUKI |
分类号 |
G03F1/08;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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