发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE: To improve an yield of semiconductor manufacture by reducing generation of foreign matters due to resist coming-off. CONSTITUTION: When a resist pattern is formed on the surface of a semiconductor wafer 1, a high-concentration alkaline having higher concentration than an alkaline solution removing a positive type resist of an exposure part to be used in a developing process is made to be discharged from a nozzle 8 for discharging high concentration solution to the back of the semiconductor wafer 1, thus making this to creep around the surface of the semiconductor wafer 1 so as to solve and remove the positive type resist 4 of the peripheral part of the positive type resist 4 applied on the semiconder wafer 1 so as to reduce generation of foreign matters due to coning-off of the positive type resist 4.</p>
申请公布号 JPH08264418(A) 申请公布日期 1996.10.11
申请号 JP19950065572 申请日期 1995.03.24
申请人 HITACHI LTD;HITACHI TOKYO ELECTRON CO LTD 发明人 MORIUCHI NOBORU;ONOZUKA TOSHIHIKO;WATANABE KAZUYUKI
分类号 G03F1/08;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F1/08
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