| 摘要 |
PURPOSE: To provide a semiconductor laser element in which the noise or the increase of the drive power is prevented and which has excellent characteristics such as low power consumption and low noise in a real refractive index guided laser in which the inhibit band gap of a current light confinement layer is narrower than that of a clad layer. CONSTITUTION: A current light confinement layer 106 is formed of a structure which has an inhibit band gap larger than that of an active layer 104 and smaller than those of first and second clad layers 103, 105 and in which the layer is thinner than 1μm and its Al composition ratio is 0.35 or less, and the stripe groove 107 is wider than 1.0 but narrower than 4μm.
|
