II-VI COMPOUND SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To obtain a blue light emitting element with a low operating voltage by providing an admixture element layer consisting of Cd or Te and an electrode layer containing an admixture element and a metal for forming eutectic alloy on ZnMgSSe semiconductor layer. CONSTITUTION: A middle layer 15 consisting of Cd or Te is inserted between upper and lower electrode layers 16 and 18 consisting of metal for forming eutectic alloy at an area to Cd or Te. By performing annealing in the case of the reaction or heat treatment of the formation process of the electrode layers 16 and 8 and the middle layer 15, Cd or Te is diffused into ZnXMg1- XSYSe1- Y (0<=X<=1, 0<=Y<=1) semiconductor layer 7 and a compound between the ZnXMg1- XSYSe1- Y (0<=X<=1, 0<=Y<=1) semiconductor and Cd or Te can be formed, thus obtaining a blue light emitting element with a lower operating voltage than an element using a conventional electrode structure.