| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to test various kinds of memories with a simple BIST by selecting and generating all patterns required for the memory test, and writing all data and address information into all memories at the same time. SOLUTION: A built-in self-tester BIST 10 is formed on a semiconductor substrate and connected to various kinds of memories having the different sizes and constitutions. The various kinds of memories include a data-cache- device DCU memory 12, a TAG memory 14, a conversion-index buffer TLB memory 16, a segment-index buffer SLB memory 18, a block-address conversion buffer BAT memory 20, a dual-port random-access memory RAM 22 and a content and address memory device CAM 24. Data compressing circuits 12a-24a are installed for comparing the memory data output of the memories 12, 14, 16, 18, 20 and 24 with anticipated data and for generating memory fault signal when mismatching occurs. The RAM 22 compares the output data and the anticipated data of the BIST 10 and generates the pass/fail bit for every memory. |
