| 摘要 |
<p>The infiltration conditions are changed between the start and the end of a chemical vapour infiltration process by varying at least one of the infiltration parameters, i.e. the dwell time of the gas phase, the pressure, the temperature, the precursor content of the gas phase, and the optional dopant content of the gas phase, whereby the infiltration conditions may be adapted to changes in the pore size of the substrate to control the microstructure of the material deposited within the substrate, and particularly to maintain a constant microstructure.</p> |
