发明名称 |
Process for realizing trench isolation structures |
摘要 |
A novel process for forming, on a semiconductor substrate, a dielectric isolation structure between two zones of an integrated circuit wherein active regions of electronic components integrated thereto have already been defined, comprises the steps of: defining an isolation region (45) on a layer of silicon oxide (42) overlying a silicon layer (41); selectively etching the silicon (41) to provide the isolation region (45); growing thermal oxide (43) over the interior surfaces of the isolation structure (45); depositing dielectric (46) conformingly; and oxidizing the deposited dielectric (46). <IMAGE> <IMAGE> |
申请公布号 |
EP0735580(A1) |
申请公布日期 |
1996.10.02 |
申请号 |
EP19950830125 |
申请日期 |
1995.03.31 |
申请人 |
CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
ZAMBRANO, RAFFAELE |
分类号 |
H01L29/73;H01L21/331;H01L21/76;H01L21/762;H01L21/763;H01L21/8222;H01L21/8234;H01L27/06;H01L27/082;H01L27/088;H01L29/732;H01L29/78 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|