| 摘要 |
1300033 Semi-conductor devices TEXAS INSTRUMENTS Inc 19 April 1971 [13 Feb 1970] 21262/71 Heading H1K In an integrated circuit comprising a plurality of mesas on a semi-conductor substrate 11 of opposite conductivity type to at least the lower parts of the mesas, low resistivity regions 12 forming PN junctions with the substrate 11 are provided beneath the mesas and the grooves 16, 17 surrounding the mesas, electrical contact being established to the regions 12 through windows in an insulating layer 19 lining the grooves 16, 17. At least some of the mesas contain circuit components such as transistors, diodes and resistors. In the Si integrated circuit described the P type substrate 11 is B-doped and has a (100) orientation. An N type epitaxial layer 13 is deposited thereon after selective diffusion of As to form N+ regions 12, and B is then diffused non-selectively to form a P type surface layer 14. The grooves 16, 17 are formed using an anisotropic etchant, and circuit elements are formed in the mesas so formed. In a modification the circuit elements are formed by selective diffusion before the mesa configuration is produced by etching. |
