DRAM trench capacitor with insulating collar

摘要

An improved trench cell capacitor (32) within a semiconductor body and methods for producing the same are presented. The improved capacitor, which is suitable for use in 64 Mb DRAMs and other memory cells, comprises a trench cell (21) having doped semiconductor material (38,37) disposed therein, and an oxide isolation collar (24) surrounding the doped material. A thin nitride layer (25) is disposed between the oxide isolation collar and the doped material, resulting in a configuration which provides improved trench cell capacitor processing.