| 发明名称 |
Semiconductor laser and method for fabricating the same |
| 摘要 |
A semiconductor laser of the invention includes a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and a semiconductor multilayer structure formed on the substrate. The stripe groove extends along a <1-10> direction. The semiconductor multilayer structure includes an AlxGa1-x As layer (0</=x</=1) including a portion having a surface of an (all) crystal plane (a>1), the portion being positioned on the stripe groove, a pair of AlGaInP cladding layers provided on the AlxGa1-xAs layer (0</=x</=1), and an active layer sandwiched between the pair of AlGaInP cladding layers.
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| 申请公布号 |
US5561080(A) |
申请公布日期 |
1996.10.01 |
| 申请号 |
US19950396520 |
申请日期 |
1995.03.01 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIBASHI, AKIHIKO;KIDOGUCHI, ISAO;OHNAKA, KIYOSHI;MANNOU, MASAYA |
| 分类号 |
H01S5/20;H01S5/22;H01S5/223;H01S5/30;H01S5/32;H01S5/323;H01S5/343;H01S5/347;(IPC1-7):H01L21/20 |
主分类号 |
H01S5/20 |
| 代理机构 |
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