| 摘要 |
PURPOSE: To obtain a silica glass tool for heat-treating a semiconductor element with less life time of a silicon wafer and with less dielectric strength of an oxide film by distributing OH group to a specific depth from the semiconductor element treatment surface at least by a specific amount, without causing the tool to contain a reducing gas. CONSTITUTION: In a silica glass tool that is formed by silica glass obtained by electrically melting a crystal silicon dioxide powder, the tool does not contain reducing gas, and an OH-group is distributed at least by 500 ppm from the semiconductor element treatment surface to a depth of 100μm. For example, the crystal silicon dioxide power is melted electrically, a silica glass pure rod is created, and the rod is worked to form a boat for heat-treating silicon wafer. Also, the crystal silicon dioxide powder is melted separately and electrically to manufacture a vertical-type reactor core tube. The boat is set into the reactor core tube and is heat-treated at 1,000 deg.C for 24 hours in an atmosphere containing steam in the reactor core tube, and OH group is doped on the boat surface or a surface in the reactor core tube.
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