| 摘要 |
PURPOSE: To reduce the chip area of a semiconductor device and make the operation fast. CONSTITUTION: This semiconductor device is equipped with an internal dummy ground voltage generating circuit 1, an internal circuit 9, and an output circuit 11. When the voltage (internal dummy ground voltage intVss) at a node N1 exceeds a specific voltage level, a p channel MOS transistor(TR) 13 discharges a current to hold the internal dummy ground voltage intVss at the specific voltage level. To turn on n channel MOS TRs 15 and 17 of the output circuit 11, an external source voltage extVcc is applied to the gate from an internal circuit 9. Consequently, the area of the chip of the semiconductor device can be reduced and the operation can be made fast. |
