| 摘要 |
The output matching networks normally included in a microwave power transistor package as well as the transistor combining network therefor are eliminated for heating applications, e.g. microwave ovens. In a preferred embodiment, the transistor dies of four microwave silicon bipolar power transistors are directly connected to the low impedance points of a common patch type antenna element, also referred to as an applicator, located within the wall of a heating chamber in place of a magnetron. Each pair of power transistors are electrically spaced one half wavelength apart and are located transverse to each other on the antenna. The transistors are operated in pairs with a 180 DEG phase difference so that mutually orthogonal longitudinal modes are excited in the antenna. Moreover, the transistors are frequency modulated over their prescribed frequency band to eliminate standing waves in the load, i.e. the article or substance being heated or cooked. Either one or a plurality of patch antennas can be used and operated, moreover, at two different frequencies allowed for heating applications, typically 915 MHz and 2450 MHz.
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