发明名称 METHOD FOR MAKING IMPROVED LSCO STACK ELECTRODE
摘要 A method for making an improved LSCO stack in the generation of small platinum features (46) on the surface of a substrate (32) by sputtering of the LSCO material (54) and utilizing a photoresist mask to pattern the LSCO (54) in accordance with the platinum features (46). The problems and expense associated with high-temperature deposition of LSCO on platinum and the etching thereof are overcome by sputtering the LSCO at room temperature.
申请公布号 WO9628844(A1) 申请公布日期 1996.09.19
申请号 WO1996US03230 申请日期 1996.03.08
申请人 RADIANT TECHNOLOGIES, INC. 发明人 EVANS, JOSEPH, TATE, JR.;BOYER, LENARD
分类号 H01L21/28;H01L21/02;H01L21/822;H01L27/04;(IPC1-7):H01L21/44 主分类号 H01L21/28
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