发明名称 |
METHOD FOR MAKING IMPROVED LSCO STACK ELECTRODE |
摘要 |
A method for making an improved LSCO stack in the generation of small platinum features (46) on the surface of a substrate (32) by sputtering of the LSCO material (54) and utilizing a photoresist mask to pattern the LSCO (54) in accordance with the platinum features (46). The problems and expense associated with high-temperature deposition of LSCO on platinum and the etching thereof are overcome by sputtering the LSCO at room temperature.
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申请公布号 |
WO9628844(A1) |
申请公布日期 |
1996.09.19 |
申请号 |
WO1996US03230 |
申请日期 |
1996.03.08 |
申请人 |
RADIANT TECHNOLOGIES, INC. |
发明人 |
EVANS, JOSEPH, TATE, JR.;BOYER, LENARD |
分类号 |
H01L21/28;H01L21/02;H01L21/822;H01L27/04;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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