| 摘要 |
PROBLEM TO BE SOLVED: To provide a fixing method of a first substrate to a second substrate using a high melting point intermetallic compound phase especially fit for three dimensional circuit device. SOLUTION: In order to fix a first substrate 11 to a second substrate 21, gallium 19 is selectively deposited on the surface of a conductive pattern 18 provided on the first substrate 11 by CVD process using an organometallic compound. Gallium 19, after bonding the substrates 11, 21, is mixed with a metal 28 which forms a high melting point intermetallic compound phase with the solid junction between the substrates 11, 21 together with the gallium 19. The method developed by this invention can be used for three dimensional integration. |
