| 摘要 |
PURPOSE: To provide a method for manufacturing a simple and stable semiconductor device, which can form a fine emitter electrode, which has a high realibility and can be connected with an air bridge wiring, and can improve the operation of the device in a high frequency, and further provided a semiconductor device which is manufactured by the method. CONSTITUTION: A dummy emitter electrode 30 with the exposed upper surface is removed from the surface of a resist 7 and after a metal film 21 for emitter electrode, which is a WSi film, is made to adhere to the whole surface of the resist 7 using a sputtering method or the like, a resist 71 is formed (f) on the film 21 and the film 21 is etched using this resist 71 as a mask to form an emitter electrode. Thereby, the emitter electrode consisting of the high-melting point metal film can be formed easily and stably and the reliability of an HBT can be improved. Moreover, as an emitter layer and the bottom part of the emitter electrode are miniaturized and the width of the peripheral edge-shaped part of the upper end of the emitter electrode can be made wide properly, an air bridge wiring can be easily connected with the emitter electrode and the high-frequency operation characteristics of the HBT can be improved. |
