Post contact layer etch back process which prevents precipitate formation

摘要

A process for preventing the formation of precipitates on a substrate surface after a contact layer (e.g., tungsten layer) etch back. The process involves removing the precursor chemicals of the precipitate. In one embodiment of the invention, the precursors are removed after etching contact layer by rinsing the substrate in water at about 30 DEG C. for about 10 minutes. In a second embodiment of the invention, the precursors are removed by baking the substrate at a temperature of approximately 120 DEG C. for approximately 180 seconds.