发明名称 |
Structure and method for metallization of semiconductor devices |
摘要 |
A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
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申请公布号 |
US5554889(A) |
申请公布日期 |
1996.09.10 |
申请号 |
US19950430105 |
申请日期 |
1995.04.27 |
申请人 |
MOTOROLA, INC. |
发明人 |
SHIN, HANK H.;TRACY, CLARENCE J.;DUFFIN, ROBERT L.;FREEMAN, JR., JOHN L.;GRIVNA, GORDON;WILSON, SYD R. |
分类号 |
H01L23/532;(IPC1-7):A01L23/48;A01L23/52;A01L29/40 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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