The method of forming oxide film of semiconductor device comprises the steps of : inserting a wafer into a tube and increasing the temperature high; growing an oxide film by mixing O2:H2:DCE(Dichloroethylene); annealing the oxide film; and drawing out the wafer from the tube.
申请公布号
KR960011935(B1)
申请公布日期
1996.09.04
申请号
KR19920027070
申请日期
1992.12.31
申请人
HYUNDAI ELECTRONICS IND. CO., LTD.
发明人
UM, KEUM - YONG;LIM, JAE - EUN;JOO, MOON - SIK;PARK, MI - RA