Integrierte CMOS-Ausgangsschaltung mit bipolaren Transistoren in der Ausgangsstufe,申请号DE19906025567T-传众专利搜索

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发明名称	Integrierte CMOS-Ausgangsschaltung mit bipolaren Transistoren in der Ausgangsstufe
摘要
申请公布号	DE69025567(T2)	申请公布日期	1996.09.05
申请号	DE19906025567T	申请日期	1990.11.12
申请人	KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP;TOSHIBA MICRO-ELECTRONICS CORP., KAWASAKI, JP	发明人	KOYA, KIICHI, C/O INTELLECTUAL PROPERTY DIVISION, MINATO-KU, TOKYO 105, JP
分类号	H01L29/73;H01L21/331;H01L21/8249;H01L27/06;H03K19/013;H03K19/0944;(IPC1-7):H03K19/094;H03K19/082	主分类号	H01L29/73
代理机构		代理人
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