| 摘要 |
<p>PURPOSE: To provide a method of manufacturing a semiconductor device, which can obtain a good ohmic contact with an a-Si film. CONSTITUTION: According to a method of manufacturing a semiconductor device, the device is provided with a gate electrode 7 which is formed on an insulative substrate 1, a gate insulating film 6 which covers the electrode 7, a semiconductor layer 5 which is arranged on the film 6, source and drain electrodes 2 and 3 which are connected with the layer 5, and an N<+> layer 4, which is interposed between the layer 5 and the electrode 2 and between the layer 5 and the electrode 3, and the layer 4 containing a fine crystal silicon film, which is deposited by a plasma CVD method, as its parent body is formed on the layer 5.</p> |
