发明名称 VOLTAGE BOOSTING CIRCUIT AND BOOSTING METHOD AND MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To ensure a correct boosting operation with low power consumption even when an address is detected under asynchronous state by providing two precharge circuits, a capacitive element, etc. SOLUTION: A feeder line is connected with the gate of an insulated gate transistor and a power supply circuit of first voltage and it is precharged with a first voltage through the power supply circuit. A booster circuit comprises a booster precharge circuit 406 connected with the feeder line and precharging the feeder line with a first voltage, and a boosting capacitor 410 connected with the feeder line and boosting the precharge feeder line to a second voltage higher than the first voltage. A reset circuit resets the feeder line to first voltage upon finishing the operation of boosting circuit.</p>
申请公布号 JPH08227592(A) 申请公布日期 1996.09.03
申请号 JP19950296786 申请日期 1995.11.15
申请人 S G S THOMSON MICROELECTRON LTD 发明人 ANDORIYUU FUERISU
分类号 G11C14/00;G05F3/24;G11C8/08;G11C16/06;G11C17/00;(IPC1-7):G11C16/06 主分类号 G11C14/00
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