| 摘要 |
<p>PURPOSE: To enable semiconductor devices of different characteristics to be selectively formed on the same substrate by a method wherein a laser process is carried out selectively using laser ray which is varied in laser energy corre sponding to a semiconductor device of required characteristics. CONSTITUTION: An silicon oxide film is formed on a glass substrate, and then an amorphous silicon film is formed through the plasma CVD method. Then, an SiO2 film (silicon oxide film) is formed as thick as 500Åor so and made to function as mask in an after process where Ni is added. The SiO2 film is removed by patterning from the peripheral circuit region of the glass substrate, the substrate is dipped into aqua ammonia, then an SiO2 film is formed on the exposed surface of the amorphous silicon a film as thick as 50 to 80Åor so. Next, Ni element which promotes a silicon film in crystallization is introduced into the amorphous film located on the peripheral circuit region. At this point, no Ni element is introduced into the surface of the amorphous silicon film located on a picture element region. On the other hand, Ni element is diffused into the amorphous silicon film located on the peripheral circuit region penetrating through the SiO2 film.</p> |
