| 摘要 |
PURPOSE: To rapidly enhance the light emitting output by sandwiching an active layer made of InGaN between n type clad layers made of InGaN having a larger band gap than that of this active layer. CONSTITUTION: An active layer 6 is formed between the first n type and p type clad layers 5 and 7. This active layer 6 formed of InxGa1-x N (0<x<1) may be either n type or p type and can emit light between bands by being undoped and enables half value width of the emitted wavelength to be narrowed. As for a preferable combination of the active layer 6 and the first n type and p type clad layers 5 and 7, the first n type clad layer 5, the active layer 6 and the first p type clad layer may be formed of respectively Iny Ga1-y N, Inx Ga1-x N and Inz Ga1-z N. In terms of the relation of the band gaps, it is mandatory to be y<x, z<x. Through these procedures, the crystallizability of the active layer 6 can be enhanced to notably improve the luminous output, thereby enabling a high brightness green colored LED although conventionally hard to make to be realized. |
