SEMICONDUCTOR PROCESSING METHOD OF FORMING AN ELECTRICALLY CONDUCTIVE CONTACT PLUG

摘要

A semiconductor processing method of forming an electrically conductive contact plug relative to a wafer includes: a) providing a substrate (36) to which electrical connection is to be made; b) depositing a layer of first material (40) atop the substrate (36) to a selected thickness; c) pattern masking the first material layer (40) for formation of a desired contact opening (44) therethrough; d) etching through the first material layer (40) to form a contact opening (44) therethrough for making electrical connection with the substrate, the contact opening having an outermost region; e) after etching to form the contact opening (44), removing the masking (42) from the first material layer; f) after removing the masking (42) from the first material layer (40), facet sputter etching into the first material layer (40) relative to the contact opening (44) to provide outwardly angled sidewalls (48) which effectively widen the contact opening outermost region, the outwardly angled sidewalls (48) having an inner base where they join with the original contact opening (44); g) depositing a layer of conductive material (52) atop the wafer and to within the facet etched contact opening to fill the contact opening (44); and h) etching the conductive material (52) and first material layer (40) inwardly to at least the angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate (36).