| 摘要 |
PURPOSE:To prevent processing damage, contamination of an electron storage region by forming a one-dimensional electron storage region in one continuously growing step. CONSTITUTION:One layer 12 is grown in a rectangular state on a substrate 19 in which a selective mask is previously disposed by an organic metal vapor growth method, etc., modulated doped layers 12-15 are selectively grown only on the side face of the rectangular state by subsequent growing, and a one- dimensional electron storage region 18 is formed near the boundary of a hetero junction between an undoped second semiconductor layer 13 near an undoped third semiconductor layer 14 at the intermediate between the layer 13 and a doped fourth semiconductor layer 15. Thus, quantum fine wires are formed only in the growing step, thereby completely escaping from processing damage and contamination. |
