发明名称 |
Semiconductor optical device |
摘要 |
<p>In a semiconductor optical device including a region in which semiconductor or carriers in the semiconductor and light interact, for example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc., a quantum well structure comprises a well region and a barrier region. The semiconductor optical device is remarkably improved in the degree of freedom of its design such as thickness and selection of material without deteriorating the quantum effect, by introducing a super lattice super-layer structure into the barrier region of the quantum well structure or defining the strain for the well region and the barrier region. <IMAGE></p> |
申请公布号 |
EP0727821(A2) |
申请公布日期 |
1996.08.21 |
申请号 |
EP19960104886 |
申请日期 |
1990.05.29 |
申请人 |
HITACHI, LTD. |
发明人 |
UOMI, KAZUHISA;SASAKI, SHINJI;TSUCHIYA, TOMONOBU;CHINONE, NAOKI;OHTOSHI, TSUKURU |
分类号 |
G02F1/017;H01L31/0352;H01L33/06;H01S5/062;H01S5/12;H01S5/125;H01S5/20;H01S5/227;H01S5/32;H01S5/34;H01S5/343;(IPC1-7):H01L29/15;H01L33/00;H01L31/035;H01S3/19;H01S3/06 |
主分类号 |
G02F1/017 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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