FIELD: electronic devices, large-scale integral circuits which use field-effect transistors. SUBSTANCE: gate has two lambda diodes and gate which has three field-effect transistors with control junction. EFFECT: increased reliability.
申请公布号
RU94007111(A)
申请公布日期
1996.08.20
申请号
RU19940007111
申请日期
1994.03.01
申请人
NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT MNOGOPROTSESSORNYKH VYCHISLITEL'NYKH SISTEM PRI TAGANROGSKOM RADIOTEKHNICHESKOM INSTITUTE IM.V.D.KALMYKOVA
