| 摘要 |
PROBLEM TO BE SOLVED: To form a low resistivity substrate which has the minimum dislocation and a suitable thickness on an epitaxially grown semiconductor layer, by eliminating a thin film layer from the backside of the substrate, or by adding a thin film layer to the backside of the substrate, and forming a protruding curved surface on the substrate. SOLUTION: In order to minimize the movement and the increase of dislocation of an element layer, a desirable curvature is formed on a substrate. That is firstly, a self-doped masking layer 530 is stuck on the backside of the substrate. Secondly, a wafer is arranged in an epitaxial reaction vessel, and a thin layer 520 of a P<+> type epitaxial film is grown on the surface of the substrate. Thirdly, a compression layer on the backside is eliminated, and a protruding type curvature is formed on the element layer. A pad oxide/nitride layer is grown, and patterning is performed for facilitating antimony (or arsenic) implantation in a subcollector region 540 (N<+> ). A subcollector mask is eliminated and a second epitaxial layer 545 (P<-> ) is grown.
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