GALLIUM PHOSPHIDE CRYSTAL SUBSTRATE FOR LIQUID PHASE EPITAXIAL GROWTH AND METHOD FOR GROWING SEMICONDUCTOR CRYSTAL USING SAME

摘要

PURPOSE: To attain liq. phase epitaxial growth of GaP in a uniform film thickness without causing facet growth. CONSTITUTION: This GaP crystal substrate has 0.2-0.4 deg. angle between orientation perpendicular to the surface of this substrate and that perpendicular to the (111) face of this substrate. This substrate is used for growing a GaP crystal film by a liq. phase epitaxial growth method.