| 摘要 |
PURPOSE: To enable the shape control of a resist film to be faciliated not to affect a lower layer at all by a method wherein a plasma processor having a high-frequency power supply capable of independently setting a plasma producing power and a substrate bias voltage is used for plasma irradiation. CONSTITUTION: An electrode pad 9, a surface protective film 10 and a photoresist film 12 are successively formed on a semiconductor substrate 8 while a connecting hole in which the electrode pad 9 is exposed is formed. A plasma processor provided with a high-frequency power supply capable of independently supplying a plasma producing power and a substrate bias voltage is used for irradiating a processed substrate 2 with plasma. For example, the upper parts of a photoresist film 12 expand over the hole out by the thermal expansion due to the plasma irradiation in the plasma processing step so that the upper parts of a connecting hole 11 is over hung, simultaneously changing the surface properties. Next, the processed substrate 2, after finishing the processing step, is fed to a metallic film forming device so as to form a multilayer film of Cr, Cu, Au, etc., i.e., a BLM film 20. |
