发明名称 INTERNAL BOOSTER CIRCUIT IN SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To obtain a stabilized step-up voltage having sufficient level by suppressing the body effect of an output transistor. SOLUTION: Output from an oscillator 8 is applied to step-up capacitors 2, 4 in order to step-up the voltages at step-up nodes A, B, and the gate of an output transistor 6 is controlled by the step-up node B so as to output a step-up voltage VPP from the step-up node A through the output transistor 6. In such an internal voltage step-up circuit, the internal voltage level of an oscillator 8 is converted through a voltage converter 30 into a power supply voltage level and applied to the step-up capacitor 4 and/or 2. Since the step-up nodes A, B can be stepped up to at least 2VCC level, body effects of the output transistor 6 can be avoided.</p>
申请公布号 JPH08205526(A) 申请公布日期 1996.08.09
申请号 JP19950263134 申请日期 1995.10.11
申请人 SAMSUNG ELECTRON CO LTD 发明人 IN SEISHIYOU;KIN HEICHIYORU
分类号 G11C11/407;G11C5/14;H01L27/10;H02M3/07;H03K19/00;(IPC1-7):H02M3/07 主分类号 G11C11/407
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