发明名称 |
Bipolar integrated device having parasitic current detector |
摘要 |
A bipolar semiconductor integrated circuit for driving a motor and the like wherein a semiconductor pattern and a circuit are so contrived that an erroneous operation will not take place even when a negative potential is applied to the output terminal of the circuit. When a negative potential is applied, there exists a quantitative proportional relationship between a parasitic current of a parasitic transistor and a ratio of the lengths of the collectors. The parasitic current decreases with a decrease in the length of the collector. Therefore, the short side of a transistor in the control circuit is directed to the output transistor to which a negative potential will be applied. By detecting the parasitic current and by adding a current to the constant-current using a current mirror circuit, furthermore, erroneous operation due to parasitism can be completely prevented.
|
申请公布号 |
US5543747(A) |
申请公布日期 |
1996.08.06 |
申请号 |
US19940363778 |
申请日期 |
1994.12.27 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
HAYAKAWA, JUNJI;BAN, HIROYUKI |
分类号 |
G05F3/22;(IPC1-7):H01L25/00 |
主分类号 |
G05F3/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|