| 发明名称 |
Method of forming a field oxide film in a semiconductor device |
| 摘要 |
The present invention discloses a method of forming a field oxide film of a semiconductor device which can minimize a bird's beak by etching a predetermined portion of a silicon substrate, forming a field oxide film and forming a single crystal silicon layer on the etched silicon substrate.
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| 申请公布号 |
US5541136(A) |
申请公布日期 |
1996.07.30 |
| 申请号 |
US19950498912 |
申请日期 |
1995.07.06 |
| 申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK, SANG H. |
| 分类号 |
H01L21/316;H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
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