Halvledarkomponent medlinjär ström-spännings-kara kteristik

摘要

A semiconductor device has a linear current-to-voltage characteristic through the origin of coordinates and additionally a bi-directional structure. The typical device contains an oxide layer on top of a p- doped substrate. On top of this oxide layer a n-type drift region is created which forms a longitudinal n-drift region. The n-drift region comprises at each end a low doped p-type well which has a portion with strongly doped p+ semiconductor material which will constitute contacting to either a source or a drain electrode. Each p-type well additionally contains a n+ area and additionally on top of said p-type well a gate electrode, whereby the n+ doped area is positioned in the p-well between a gate and a drain electrode or a gate and a source electrode, respectively. Thus a bi-directional double DMOS structure is created having a common drift region.