发明名称 |
PHASE-CHANGABLE MEMORY DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
<p>In a phase changeable memory device and a method of formation thereof, the phase changeable memory device comprises: a lower electrode pattern on an interlayer insulating layer; an insulating pattern located on the lower electrode pattern; a phase changeable pattern penetrating the insulating pattern and the lower electrode pattern to contact the lower electrode pattern and the interlayer insulating layer; and an upper electrode on the phase changeable pattern.</p> |
申请公布号 |
KR20060034530(A) |
申请公布日期 |
2006.04.24 |
申请号 |
KR20040083690 |
申请日期 |
2004.10.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, BYEONG OK;JOO, SUK HO;RYOO, KYUNG CHANG;BYUN, KYUNG RAE |
分类号 |
H01L21/8247;G11C11/15;H01L21/28;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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