发明名称 Nanotube- and nanocrystal-based non-volatile memory
摘要 An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.
申请公布号 US7262991(B2) 申请公布日期 2007.08.28
申请号 US20050174128 申请日期 2005.06.30
申请人 INTEL CORPORATION 发明人 ZHANG YUEGANG;GANGULY UDAYAN;KAN EDWIN
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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