发明名称 |
TRANSISTOR DEVICE HAVING AN INCREASED THRESHOLD STABILITY WITHOUT DRIVE CURRENT DEGRADATION |
摘要 |
By removing a portion of a halo region or by avoiding the formation of the halo region within the extension region, which may be subsequently formed on the basis of a re-grown semiconductor material, the threshold roll off behavior may be significantly improved, wherein an enhanced current drive capability may simultaneously be achieved.
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申请公布号 |
US2007202641(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20060551263 |
申请日期 |
2006.10.20 |
申请人 |
WEI ANDY;KAMMLER THORSTEN;HOENTSCHEL JAN;HORSTMANN MANFRED |
发明人 |
WEI ANDY;KAMMLER THORSTEN;HOENTSCHEL JAN;HORSTMANN MANFRED |
分类号 |
H01L21/337;H01L21/22 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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